Growth Kinetics and Microstructure of Siliconized Layer by Molten Salt Electrodeposition
The siliconized layers were formed on the surface of hot rolled grain oriented silicon steel using a molten salt pulse electrodeposition method. The process was performed in the temperature range 1023-1123 K and with varying deposition time (60-180 min). The profile distribution of Si in the siliconized layer was measured using the glow discharge spectrometry (GDS) and the depth from the surface to the substrate was taken as the layer thickness. The morphology and structure were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results showed that a longer deposition time tended to produce a larger grain and a looser, rougher layer. The phase structure of the layer was composed of Fe3Si with (110) preferred orientation in the experimental range. The longer deposition time resulted in an increase in thickness layer and the thickness of the layers ranged from 17 to 165m. Kinetic studies showed that the siliconized layer grew with a parabolic rate law, indicating the diffusion controlled growth. The activation energy for growth of siliconized layer was about 242 kJ/mol.
H. L. Yang et al., "Growth Kinetics and Microstructure of Siliconized Layer by Molten Salt Electrodeposition", Advanced Materials Research, Vol. 214, pp. 434-438, 2011