The Mean Projected Range and Range Straggling of Er Ions Implanted in Silicon-On-Insulator

Xi Feng Qin; Shuang Li; Feng Xiang Wang; Yi Liang

doi:10.4028/www.scientific.net/AMR.214.522

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 214The Mean Projected Range and Range Straggling of...

The Mean Projected Range and Range Straggling of Er Ions Implanted in Silicon-On-Insulator

Abstract:

It is very important to consider the distribution of range, range straggling and lateral spread of ions implanted into semiconductor materials in design and fabrication of semiconductor integration devices by ion implantation. The mean projected ranges and range straggling for energetic 200 – 500 keV Er ions implanted in silicon-on-insulator (SOI) were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2006) calculations. It has been found that the measured values of the mean projected range are good agreement with the SRIM calculated values; for the range straggling , the difference between the experiment data and the calculated results is much higher than that of .

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Periodical:

Advanced Materials Research (Volume 214)

Pages:

522-525

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.214.522

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Online since:

February 2011

Authors:

Xi Feng Qin, Shuang Li, Feng Xiang Wang, Yi Liang

Keywords:

Ion Implantation, Projected Range, Range Straggling, Rutherford Backscattering Technique, Silicon-on-Insulator (SOI)

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