Optical and Electrical Character of SICGe/SIC Heterojunction Phototransistor with Charge Compensation Layer

Abstract:

Article Preview

The optical properties of SiCGe epitaxial on 6H-SiC substrate by LPCVD were investigated by transmittance measurements. Swanepoel methods were used in order to calculate the optical properties of the sample. The result was use to simulation the performance of n-SiC/p-SiCGe/n-SiCGe heterojunction phototransistor with charge compensation layer. Simulation results show that with wide bandgap SiC emitter and p-type SiCGe charge-compensation layer, device responsivity doubled and breakdown voltage increased from 440V to 580V for the given structure

Info:

Periodical:

Edited by:

Yuhang Yang, Xilong Qu, Yiping Luo and Aimin Yang

Pages:

544-547

DOI:

10.4028/www.scientific.net/AMR.216.544

Citation:

L. Cao et al., "Optical and Electrical Character of SICGe/SIC Heterojunction Phototransistor with Charge Compensation Layer", Advanced Materials Research, Vol. 216, pp. 544-547, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.