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Optical and Electrical Character of SICGe/SIC Heterojunction Phototransistor with Charge Compensation Layer

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Abstract:

The optical properties of SiCGe epitaxial on 6H-SiC substrate by LPCVD were investigated by transmittance measurements. Swanepoel methods were used in order to calculate the optical properties of the sample. The result was use to simulation the performance of n-SiC/p-SiCGe/n-SiCGe heterojunction phototransistor with charge compensation layer. Simulation results show that with wide bandgap SiC emitter and p-type SiCGe charge-compensation layer, device responsivity doubled and breakdown voltage increased from 440V to 580V for the given structure

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Periodical:

Advanced Materials Research (Volume 216)

Pages:

544-547

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.216.544

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Online since:

March 2011

Authors:

Lin Cao, Hong Bin Pu, Zhi Ming Chen, Shao Jiang Zhou

Keywords:

Charge-Compensation, Heterojunction Phototransistor, SiCGe/SiC, Swanepoel Method

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] John T. Torvik, Moeljanto Leksono and Jacques I. Pankove: Applied Physics Letters Vol. 72 (1998), p.1371.

Google Scholar

[2] Zhu Feng, Chen Zhi-Ming, Li Lian-Bi, Zhao Shun-Feng, and Lin Tao: Chinese Physics B Vol. 18 (2009), p.4966.

DOI: 10.1088/1674-1056/18/11/058

Google Scholar

[3] K.J. Roe, G. Katulka, J. Kolodzey, S.E. Saddow and D. Jacobson: Appl. Phys. Lett. Vol. 78 (2001) p. (2073).

DOI: 10.1063/1.1358851

Google Scholar

[4] Z.M. Chen, H.B. Pu, L.M. Wo, G. Lu, L.B. Li, C.X. Tan: Microelectronic Engineering Vol. 83 (2006) p.70.

Google Scholar

[5] Li Lianbi, Chen Zhiming, Lin Tao, Pu Hongbin, Li Jia and Li Qingmin: Surface and Interface Analysis Vol. 40 (2008), p.935.

DOI: 10.1002/sia.2806

Google Scholar

[6] Alto P: MEDICI 4. 0 user's manual. (CA: TMA Inc, 2001).

Google Scholar

[7] Swanepoel R J: J. Phys. E: Sci. Instrum, Vol. 16 (1983) p.1214.

Google Scholar

[8] M. Fox: Optical Properties of Solids (Oxford University Press, UK 2002).

Google Scholar

[9] Wang C L: Chin. Phys. B. Vol. 18 (2009) p.1231.

Google Scholar

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