Research on Effect of High Energy Implant to Resist Thickness

Abstract:

The experiment discusses the issue of high-energy implant to the resist thickness and how the resist etched away during implantation process. The resist that is use as a mask or material to block the dopant ion such as Phosphorous, Boron or Arsenic introduces into silicon substrate. It is a common practice by all semiconductor industrial players to use photoresist as their protection on desired area in which purposely set as non-implanted area. The research benefits the engineer on determine the sufficient photoresist thickness for specific implant energy.

• Periodical: Advanced Materials Research (Volumes 230-232)
• Pages: 718-722
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.230-232.718
• Online since: May 2011
• Authors: Hazian Mamat, Nurfirdaus A. Rahim, Mohd Zahrin A. Wahab, Azman Jalar
• Keywords: Field Emission Scanning Electron Microscopy (FESEM), Implant Dose, Implant Energy, Implanter, Photoresist, Photoresist Thickness

References

[1] Internet Website http: /en. wikipedia. org/wiki/Ion_ implantation.

[2] Internet Website http: /en. wikipedia. org/wiki/ Photoresist.

[3] Stanley Wolf, Basics MOS Physic and The MOS Capacitor, in Silicon Processing for the VLSI Era, Vol. 3, pg. 86. (1995).

[4] Prof. Dr. O. Brand, Dr. G. K. Fedder , CMOS – MEMS, Book series Advanced Micro and Nanoystems, 2005 Wiley-Vch Verlag GmbH & Co. KGaA.

[5] Novel Self-planarizing CVD Oxide for Interlayer Dielectric Applications,. IEEE IEDM Tech. Dig., pp.117-120 (1994).