Research on Effect of High Energy Implant to Resist Thickness
The experiment discusses the issue of high-energy implant to the resist thickness and how the resist etched away during implantation process. The resist that is use as a mask or material to block the dopant ion such as Phosphorous, Boron or Arsenic introduces into silicon substrate. It is a common practice by all semiconductor industrial players to use photoresist as their protection on desired area in which purposely set as non-implanted area. The research benefits the engineer on determine the sufficient photoresist thickness for specific implant energy.
Ran Chen and Wenli Yao
H. Mamat et al., "Research on Effect of High Energy Implant to Resist Thickness", Advanced Materials Research, Vols. 230-232, pp. 718-722, 2011