Research on Effect of High Energy Implant to Resist Thickness

Abstract:

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The experiment discusses the issue of high-energy implant to the resist thickness and how the resist etched away during implantation process. The resist that is use as a mask or material to block the dopant ion such as Phosphorous, Boron or Arsenic introduces into silicon substrate. It is a common practice by all semiconductor industrial players to use photoresist as their protection on desired area in which purposely set as non-implanted area. The research benefits the engineer on determine the sufficient photoresist thickness for specific implant energy.

Info:

Periodical:

Advanced Materials Research (Volumes 230-232)

Edited by:

Ran Chen and Wenli Yao

Pages:

718-722

DOI:

10.4028/www.scientific.net/AMR.230-232.718

Citation:

H. Mamat et al., "Research on Effect of High Energy Implant to Resist Thickness", Advanced Materials Research, Vols. 230-232, pp. 718-722, 2011

Online since:

May 2011

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Price:

$35.00

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