Influence of Annealing Temperature on Microstructure and Magnetic Properties of Ti/Ni/Ti Thin Films

Shun Zhen Feng; Ji Hong Liu; Pu Hao; Yan Hui Dong; Hui Yuan Sun

doi:10.4028/www.scientific.net/AMR.239-242.1699

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 239-242Influence of Annealing Temperature on...

Influence of Annealing Temperature on Microstructure and Magnetic Properties of Ti/Ni/Ti Thin Films

Abstract:

Ti(3nm)/Ni(10nm)/Ti(3nm) films were deposited directly on glass substrates using dc facing-target magnetron sputtering system at room temperature and in situ-annealed from room temperature(RT) to annealing temperature(Ta) 500°C, respectively. At Ta = 400°C, the gain size was about 15 nm, and the magnetic domains of the films distributed homogenously, and the magnetic domain cluster size was nearly 25 nm. The maximum perpendicular coercivity of Ti(3nm)/Ni(10nm)/Ti(3nm) films was 1360 Oe. The segregation or diffusion of Ti and the stress anisotropy played important roles to increase the coercivity. The intergrain interaction of films was obtained by δM plots. In annealing films, X-ray diffraction (XRD) profiles showed two diffraction peaks of NiTi monoclinic structure (002), (111) lattice orientations.

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Advanced Materials Research (Volumes 239-242)

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1699-1702

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https://doi.org/10.4028/www.scientific.net/AMR.239-242.1699

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May 2011

Authors:

Shun Zhen Feng, Ji Hong Liu, Pu Hao, Yan Hui Dong, Hui Yuan Sun

Keywords:

Magnetron Sputtering, Perpendicular Coercivity, Stress Anisotropy

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