Measuring the Changes in InP Morphological and Electrical Specifications Caused by Oxygen Ion Implantation

A.H. Ramezani; M.R. Hantezadeh; M. Ghoranneviss; A.H. Sari

doi:10.4028/www.scientific.net/AMR.264-265.1312

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 264-265Measuring the Changes in InP Morphological and...

Measuring the Changes in InP Morphological and Electrical Specifications Caused by Oxygen Ion Implantation

Abstract:

This paper is the results of oxygen ion implantation on morphological and electrical properties of indium phosphate (InP) semiconductor wafers. The oxygen ions were implanted at 30 keV and various doses in the range between 5×10 15 to 5×10 17 ions/cm2 and at nearly room temperature. The changes in surface roughness and resistivity before and after the implantation is studied using atomic force microscopy (AFM) and four-point probes technique, respectively. The results show that the resistivity is depend on the ion implantation dose. In addition, the RMS roughness of implanted samples dramatically increases by accumulation of oxygen ion dose.

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Periodical:

Advanced Materials Research (Volumes 264-265)

Pages:

1312-1317

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.264-265.1312

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Online since:

June 2011

Authors:

A.H. Ramezani, M.R. Hantezadeh, M. Ghoranneviss, A.H. Sari

Keywords:

AFM, Conductivity, Ion Implantation, Resistivity

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