Measuring the Changes in InP Morphological and Electrical Specifications Caused by Oxygen Ion Implantation
This paper is the results of oxygen ion implantation on morphological and electrical properties of indium phosphate (InP) semiconductor wafers. The oxygen ions were implanted at 30 keV and various doses in the range between 5×10 15 to 5×10 17 ions/cm2 and at nearly room temperature. The changes in surface roughness and resistivity before and after the implantation is studied using atomic force microscopy (AFM) and four-point probes technique, respectively. The results show that the resistivity is depend on the ion implantation dose. In addition, the RMS roughness of implanted samples dramatically increases by accumulation of oxygen ion dose.
M.S.J. Hashmi, S. Mridha and S. Naher
A.H. Ramezani et al., "Measuring the Changes in InP Morphological and Electrical Specifications Caused by Oxygen Ion Implantation", Advanced Materials Research, Vols. 264-265, pp. 1312-1317, 2011