Numerical Simulation of AlxGa1-XN/GaN Hetero Junction Quantum Well by AMPS-1D

Abstract:

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In this work, the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D) is used to study the performances of depth of AlxGa1-xN/GaN heterojunction quantum well. The calculated results of AMPS-1D software show that the effect of different Al composition on the depth of AlxGa1-xN/GaN heterojunction quantum well is slight. On the other hand, the effect of different doped concentration in AlxGa1-xN is obvious.

Info:

Periodical:

Advanced Materials Research (Volumes 282-283)

Edited by:

Helen Zhang and David Jin

Pages:

518-521

DOI:

10.4028/www.scientific.net/AMR.282-283.518

Citation:

K. J. Zhang and B. Wan, "Numerical Simulation of AlxGa1-XN/GaN Hetero Junction Quantum Well by AMPS-1D", Advanced Materials Research, Vols. 282-283, pp. 518-521, 2011

Online since:

July 2011

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$35.00

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