Numerical Simulation of AlxGa1-XN/GaN Hetero Junction Quantum Well by AMPS-1D

Abstract:

In this work, the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D) is used to study the performances of depth of AlxGa1-xN/GaN heterojunction quantum well. The calculated results of AMPS-1D software show that the effect of different Al composition on the depth of AlxGa1-xN/GaN heterojunction quantum well is slight. On the other hand, the effect of different doped concentration in AlxGa1-xN is obvious.

• Periodical: Advanced Materials Research (Volumes 282-283)
• Pages: 518-521
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.282-283.518
• Online since: July 2011
• Authors: Kai Ju Zhang, B. Wan
• Keywords: AlxGa1-XN/GaN, AMPS-1D, Numerical Simulation, Quantum Well

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