Electronic Structure of CdSe/CdXZn1-XS Core/Shell Quantum Dots
The electronic structures of CdSe/CdxZn1-xS core/shell quantum dots are investigated systematically using the effective-mass approximation method. The calculated results have shown that both of the electron and hole are completely localized at the range of core, which can be ascribed to the large energy band offset in valence band and conduction band. The carriers appear in the region of core or shell, which mainly depend on the competition between the kinetic energy and the potential energy in the heterostrucuture QDs. The transition energies can be widely tuned by the changing the structure parameters.
Xiaoming Sang, Pengcheng Wang, Liqun Ai, Yungang Li and Jinglong Bu
G. Z. Jia et al., "Electronic Structure of CdSe/CdXZn1-XS Core/Shell Quantum Dots", Advanced Materials Research, Vols. 284-286, pp. 2037-2040, 2011