Monte Carlo Study on Thermal Transport in Si/Ge Superlattice Basing on Phonon Dispersion Discrepancies

Abstract:

Article Preview

Based on the classical diffuse mismatch model (DMM), the dedicated Monte Carlo model for Si/Ge superlattice is proposed and the method to cope with the scattering at the interface is provided. In this model, phonons transport between two different materials can be taken as the movements between the different phonon dispersion relationships. If there is a corresponding position in the other material, the phonon with a given frequency will be able to pass through the interface, otherwise it will be reflected.

Info:

Periodical:

Advanced Materials Research (Volumes 284-286)

Main Theme:

Edited by:

Xiaoming Sang, Pengcheng Wang, Liqun Ai, Yungang Li and Jinglong Bu

Pages:

392-395

DOI:

10.4028/www.scientific.net/AMR.284-286.392

Citation:

Z. Wang et al., "Monte Carlo Study on Thermal Transport in Si/Ge Superlattice Basing on Phonon Dispersion Discrepancies", Advanced Materials Research, Vols. 284-286, pp. 392-395, 2011

Online since:

July 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.