Monte Carlo Study on Thermal Transport in Si/Ge Superlattice Basing on Phonon Dispersion Discrepancies

Zan Wang; Hong Yu Zhu; Yi Wu Ruan

doi:10.4028/www.scientific.net/AMR.284-286.392

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 284-286Monte Carlo Study on Thermal Transport in Si/Ge...

Monte Carlo Study on Thermal Transport in Si/Ge Superlattice Basing on Phonon Dispersion Discrepancies

Abstract:

Based on the classical diffuse mismatch model (DMM), the dedicated Monte Carlo model for Si/Ge superlattice is proposed and the method to cope with the scattering at the interface is provided. In this model, phonons transport between two different materials can be taken as the movements between the different phonon dispersion relationships. If there is a corresponding position in the other material, the phonon with a given frequency will be able to pass through the interface, otherwise it will be reflected.

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Advanced Materials Research (Volumes 284-286)

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392-395

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.284-286.392

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Online since:

July 2011

Authors:

Zan Wang, Hong Yu Zhu, Yi Wu Ruan

Keywords:

Dispersion, Monte-Carlo, Phonon, Superlattice

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