Hierarchical Structures of Silicon Oxynitride Nanowires Formed by a Gallium-Catalyzed In Situ Reactive Technique

Abstract:

Novel doughnut-like loop structures of silicon oxynitride were grown over a Si substrate via self-assembly of ordered nanowires. These hierarchical structures were formed by metallic gallium-catalyzed vapor-liquid-solid growth at high temperature under a flow of NH₃ gas. The product was characterized by XRD, SEM, EDS mapping and XPS techniques. XRD characterization confirms the formation of Si₃N₄ and silicon oxynitride phases. The silicon oxynitride loop structures assembled by ordered nanowires have outer diameters of 10-14 mm and wall thickness of 2-3 mm. The nanowire bundles in a single loop exhibit a petal-like growth mode. EDS mapping verifies the elemental distribution over the structure. XPS analyses disclose the binding contribution from Si₃N₄, silicon oxynitride and silicon oxide. The formation mechanism of the self-assembled structures was analyzed based on the growth process.

• Periodical: Advanced Materials Research (Volumes 284-286)
• Pages: 717-721
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.284-286.717
• Online since: July 2011
• Authors: Shi Biao Xiang, Xu Xiang
• Keywords: Chemical Vapor Deposition (CVD), Microstructure, Nitrification, Silicon Oxynitride Nanowires

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