Electrochemical Construction of (0001)-ZnO/(111)-Cu2O Heterojunction Diode with Excellent Rectification Feature

Fariza binti Mohamad; Junji Sasano; Tsutomu Shinagawa; Seiji Watase; Masanobu Izaki

doi:10.4028/www.scientific.net/AMR.287-290.1412

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 287-290Electrochemical Construction of...

Electrochemical Construction of (0001)-ZnO/(111)-Cu₂O Heterojunction Diode with Excellent Rectification Feature

Abstract:

The (111)-p-Cu₂O/(0001)-n-ZnO heterostructure was successfully fabricated using low-temperature electrodeposition method on Au(111)/Si(100) substrate. The ZnO film deposited at positive current density was composed of aggregates of isolated hexagonal columnar grains, and the interface between ZnO and Cu₂O layer was clearly observed. (0002)-oriented continuous ZnO layer deposited on the (111)-Cu₂O layer at negative current density, but the metallic Cu layer was formed between ZnO and Cu₂O layers by reducing Cu₂O to Cu during ZnO deposition. The Cu₂O/isolated-ZnO heterostructure showed ohmic feature, and (111)-Cu₂O/Cu/(0002)-ZnO heterostructures showed an excellent rectification with rectification ratio of 85.

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Periodical:

Advanced Materials Research (Volumes 287-290)

Pages:

1412-1415

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.287-290.1412

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Online since:

July 2011

Authors:

Fariza binti Mohamad, Junji Sasano, Tsutomu Shinagawa, Seiji Watase, Masanobu Izaki

Keywords:

Cu₂O/ZnO Heterostructure, Electro-Deposition, Rectification

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