Electrochemical Construction of (0001)-ZnO/(111)-Cu2O Heterojunction Diode with Excellent Rectification Feature
The (111)-p-Cu2O/(0001)-n-ZnO heterostructure was successfully fabricated using low-temperature electrodeposition method on Au(111)/Si(100) substrate. The ZnO film deposited at positive current density was composed of aggregates of isolated hexagonal columnar grains, and the interface between ZnO and Cu2O layer was clearly observed. (0002)-oriented continuous ZnO layer deposited on the (111)-Cu2O layer at negative current density, but the metallic Cu layer was formed between ZnO and Cu2O layers by reducing Cu2O to Cu during ZnO deposition. The Cu2O/isolated-ZnO heterostructure showed ohmic feature, and (111)-Cu2O/Cu/(0002)-ZnO heterostructures showed an excellent rectification with rectification ratio of 85.
Jinglong Bu, Pengcheng Wang, Liqun Ai, Xiaoming Sang, Yungang Li
F. binti Mohamad et al., "Electrochemical Construction of (0001)-ZnO/(111)-Cu2O Heterojunction Diode with Excellent Rectification Feature", Advanced Materials Research, Vols. 287-290, pp. 1412-1415, 2011