Dielectric Properties of Pb0.97La0.02Zr0.95Ti0.05O3 Antiferroelectric Thin Films Prepared at Different Annealing Temperatures

Abstract:

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Pb0.97La0.02Zr0.95Ti0.05O3 (PLZT) antiferroelectric thin films were prepared on Pt (111)/ Ti/SiO2/Si (100) substrates by a sol-gel process. The influences of annealing temperature on the structures and dielectric properties of the PLZT antiferroelectric thin films were investigated. And the phase structure and crystal orientation were studied by X-ray diffraction analyses (XRD). The antiferroelectric characterization of the PLZT thin films annealed at different temperature was demonstrated by P(polarization)-E(electric field) and C(capactitance)-E(electric field) curves. The maximum polarizations for the films annealed at 650°C, 700°C and 750°C were 35μC/cm2, 42μC/cm2 and 47μC/cm2, respectively. The temperature dependent of the dielectric constant and loss was measured under the frequency 1, 10, 100 and 1000 kHz. The films annealed at 700°C have high (100)-preferred orientation and excellent dielectric properties.

Info:

Periodical:

Advanced Materials Research (Volumes 287-290)

Edited by:

Jinglong Bu, Pengcheng Wang, Liqun Ai, Xiaoming Sang, Yungang Li

Pages:

2460-2463

DOI:

10.4028/www.scientific.net/AMR.287-290.2460

Citation:

W. P. Geng et al., "Dielectric Properties of Pb0.97La0.02Zr0.95Ti0.05O3 Antiferroelectric Thin Films Prepared at Different Annealing Temperatures", Advanced Materials Research, Vols. 287-290, pp. 2460-2463, 2011

Online since:

July 2011

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$35.00

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