SABER-Based Simulation for Compact Dynamic Electro-Thermal Modeling Analysis of Power Electronic Devices

Abstract:

Power electronic modules including insulated gate bipolar transistor (IGBT) are widely used in the field of power converter application. The temperature distribution inside these modules becomes more important for electrical characteristics, reliability and lifetime of integrated power electronic modules. In this paper, a seven-layer compact RC thermal component network model based on the physical structure is presented. A dynamic electro-thermal model, which is composed of electrical model, compact RC thermal component network model and electro-thermal interface is developed for the IGBT. These models interact with each other to calculate the temperature of each layer of module and parameters of each model. The thermal model determines the evolution of the temperature distribution within the thermal network and thus determines the instantaneous junction temperature used by the electrical model. Such built dynamic electro-thermal simulation methodology is implemented in the Saber circuit simulator, and the simulation result is validated by the experimental study, which adopted with infrared thermal imaging camera. The built dynamic electro-thermal model could be helpful for the research on operation performance and heat sink design for such power electronic devices.

• Periodical: Advanced Materials Research (Volumes 291-294)
• Pages: 1704-1708
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.291-294.1704
• Online since: July 2011
• Authors: Ming Chen, An Hu, Yong Tang, Bo Wang
• Keywords: Coupling Simulation, Electro-Thermal, Insulated Gate Bipolar Transistor, Power Electronic Devices, Saber

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