A Study on Surface Quality of GaN with CMP Polishing Process

Abstract:

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This paper introduced a polishing process for planarization of gallium nitride (GaN) wafer by polishing slurry that is made up by the chemical reaction with H2O2 solution and iron. Some different polishing parameters in the polishing process has been analyzed, which affect the surface quality of wafers, such as slurry particle size, polishing times, polishing slurry etc., and trying to improve the polishing process by optimization of the polishing parameters. The experimental result showed that this polishing method has an effect on the surface quality of GaN wafers, finally, the efficient and precision machining with surface roughness of GaN wafers of Ra0.81 nm has been gained by the CMP polishing process.

Info:

Periodical:

Advanced Materials Research (Volumes 291-294)

Edited by:

Yungang Li, Pengcheng Wang, Liqun Ai, Xiaoming Sang and Jinglong Bu

Pages:

1764-1767

DOI:

10.4028/www.scientific.net/AMR.291-294.1764

Citation:

W. Li et al., "A Study on Surface Quality of GaN with CMP Polishing Process", Advanced Materials Research, Vols. 291-294, pp. 1764-1767, 2011

Online since:

July 2011

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Price:

$35.00

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