A Study on Surface Quality of GaN with CMP Polishing Process

Wei Li; Ming Ming Ma; Bin Hu

doi:10.4028/www.scientific.net/AMR.291-294.1764

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 291-294A Study on Surface Quality of GaN with CMP...

A Study on Surface Quality of GaN with CMP Polishing Process

Abstract:

This paper introduced a polishing process for planarization of gallium nitride (GaN) wafer by polishing slurry that is made up by the chemical reaction with H₂O₂ solution and iron. Some different polishing parameters in the polishing process has been analyzed, which affect the surface quality of wafers, such as slurry particle size, polishing times, polishing slurry etc., and trying to improve the polishing process by optimization of the polishing parameters. The experimental result showed that this polishing method has an effect on the surface quality of GaN wafers, finally, the efficient and precision machining with surface roughness of GaN wafers of Ra0.81 nm has been gained by the CMP polishing process.

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Periodical:

Advanced Materials Research (Volumes 291-294)

Pages:

1764-1767

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.291-294.1764

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Online since:

July 2011

Authors:

Wei Li, Ming Ming Ma, Bin Hu

Keywords:

Chemical Mechanical Polishing (CMP), Gan Wafer, Surface Quality

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References

[1] Isamu Akasaki and Hiroshi Amano (1997). "Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters". Jpn. J. Appl. Phys. 36: 5393–5408

DOI: 10.1143/JJAP.36.5393

Google Scholar

[2] Myers T.H,VanMil B.L,Holbert L.J,et al.Use of high temperature hydrogen annealing to removesub-surface damage in bulk GaN[J].Journal of Crystal Growth 246(2002):244-251

DOI: 10.1016/s0022-0248(02)01748-7

Google Scholar

[3] Weyher J.L,Muller S,Grzegory I,et al.Chemical polishing of bulk and epitaxial GaN[J].Journal of Crystal Growth 182(1997):17-22.

DOI: 10.1016/s0022-0248(97)00320-5

Google Scholar