Via Structure Optimized Design and Study of Copper Interconnect

Abstract:

Electromigration(EM) failure can be occurred in the via because of the high aspect ratio of Via and the high stress in the via. The theoretical and experimental study is developed in detail. The different via structures are designed and the simulation and accelerate test is operated. The result shows the current density and electric field in the via is decreased apparently and reliability is improved by use the structures, so it is considered of the practical means for improving the copper via interconnect reliability. Finally, two optimized via structures are advanced based on the result of experiments and simulations. The two structures are instructive for the design and manufacture.

• Periodical: Advanced Materials Research (Volumes 291-294)
• Pages: 3445-3448
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.291-294.3445
• Online since: July 2011
• Authors: Ming Du, Rui Zhang
• Keywords: Copper Interconnect, Electromigration (EM), Reliability, VIA

References

[1] M. Hauschildt, M. Gall, P. Justison, R. Hernandez, and M. Herrick, "Large-scale statistical study of electromigration early failure for Cu/low-k interconnects," in Proc. 9th Int. Workshop Stress Induced Phenom. Metallization, vol. 945 (2007) 66–81

DOI: 10.1063/1.2815785

[2] J.B. Lai, J.L. Yang, H.W. Yang, R.L. Hwang, David Su, Harry Chuang, and Y.S. Huang, Real Case Studies of Failure Mechanisms for Cu Trench Electromigration, IEEE 41st Annual International Reliability Physics Symposium, (2003) 596-597

DOI: 10.1109/relphy.2003.1197823

[3] Cathryn J. Christiansen, Baozhen Li et al., Via-Depletion Electromigration in Copper Interconnects, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL.6, NO.2, (2006), 163-168

DOI: 10.1109/tdmr.2006.876595