Via Structure Optimized Design and Study of Copper Interconnect

Abstract:

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Electromigration(EM) failure can be occurred in the via because of the high aspect ratio of Via and the high stress in the via. The theoretical and experimental study is developed in detail. The different via structures are designed and the simulation and accelerate test is operated. The result shows the current density and electric field in the via is decreased apparently and reliability is improved by use the structures, so it is considered of the practical means for improving the copper via interconnect reliability. Finally, two optimized via structures are advanced based on the result of experiments and simulations. The two structures are instructive for the design and manufacture.

Info:

Periodical:

Advanced Materials Research (Volumes 291-294)

Edited by:

Yungang Li, Pengcheng Wang, Liqun Ai, Xiaoming Sang and Jinglong Bu

Pages:

3445-3448

DOI:

10.4028/www.scientific.net/AMR.291-294.3445

Citation:

M. Du and R. Zhang, "Via Structure Optimized Design and Study of Copper Interconnect", Advanced Materials Research, Vols. 291-294, pp. 3445-3448, 2011

Online since:

July 2011

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Price:

$35.00

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