Study on Preparation and Optical Absorption of Ge Doped TiO2 Composite Thin Films by Sol-Gel Method

Yan Jun Zhou; Fang He; Jin Gang Qi; Yu Lin Wang

doi:10.4028/www.scientific.net/AMR.299-300.558

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 299-300Study on Preparation and Optical Absorption of Ge...

Study on Preparation and Optical Absorption of Ge Doped TiO₂ Composite Thin Films by Sol-Gel Method

Abstract:

By using the sol-gel method, TiO₂ thin films and Ge doped TiO₂ composite thin films were fabricated onto quartz substrates. XRD, XPS and UV-vis were used to characterize the phase structure, the atomic chemical states and optical absorption of these composite TiO₂ thin films. XRD results indicate that diffraction peak of anatase is observed in samples. XPS result reveals that there is Ge crystal in Ge doped films which were prepared by sol-gel method, and Ge exists as elemental Ge and GeO₂ in the films. The composite TiO₂ thin films by sol-gel method exhibits the absorption shift to visible region due to Ge doped TiO₂ thin films.

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Advanced Materials Research (Volumes 299-300)

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558-561

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https://doi.org/10.4028/www.scientific.net/AMR.299-300.558

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Online since:

July 2011

Authors:

Yan Jun Zhou, Fang He, Jin Gang Qi, Yu Lin Wang

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Ge, Optical Absorption, Sol-Gel Method, TiO₂ Composite Thin Film

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