Effect of Annealing Temperature on the Optical and Structural Properties of Ge Doped ZnO Films

Dong Hua Fan; Kai Zhen Huang; Yu Bao Huang

doi:10.4028/www.scientific.net/AMR.304.79

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 304Effect of Annealing Temperature on the Optical and...

Effect of Annealing Temperature on the Optical and Structural Properties of Ge Doped ZnO Films

Abstract:

Ge doped ZnO films were synthesized on silicon substrate via RF magnetron co-sputtering methods. The effects of annealing temperature on the optical and structural properties of the Ge doped ZnO films were investigated by means of photoluminescence spectra, X-ray diffraction, and X-ray Photoelectron Spectroscopy. The ultra-violet emission should be related with the free-exciton recombination, and blue and yellow emissions should be attributed to the defect state caused by Ge. The varieties of annealing temperature affect greatly the optical properties. The high annealing temperature leads to the oxidation of Ge and the formation of Zn₂GeO₄, which could lead to the change of PL spectra.

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Periodical:

Advanced Materials Research (Volume 304)

Pages:

79-83

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.304.79

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Online since:

July 2011

Authors:

Dong Hua Fan, Kai Zhen Huang, Yu Bao Huang

Keywords:

Ge, Photoluminescence (PL), ZnO Film

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References

[1] K. Iwata, P. Fons, A. Yamada, K. Matsubara, and S. Niki, J. Cryst. Growth Vol. 209 (2000), p.526.

Google Scholar

[2] T. Aoki, Y. Hatanaka, and D. C. Look, Appl. Phys. Lett. Vol. 76 (2000), p.3257.

Google Scholar

[3] Y. R. Ryu, S. Zhu, D. C. Look, J. M. Wrobel, H. M. Jeong, and H. W. White, J. Cryst. Growth vol. 216 (2000), p.330.

Google Scholar

[4] K. Ueda, H. Tabata, and T. Kawai, Appl. Phys. Lett. Vol. 79 (2001), p.988.

Google Scholar

[5] X.T. Zhang, Y.C. Liu, J.G. Ma, Y.M. Lu, D.Z. Shen, W. Xu, G.Z. Zhong, X.W. Fan, Thin Solid Films vol. 413 (2002), p.257.

Google Scholar

[6] J. Cho, J. Nah, M. OH, J. Song, K. Yoon, J. J. Appl. Phys. Vol. 40 (2001), p. L1040.

Google Scholar

[7] T.H. Zheng, Z.Q. Li, J.K. Chen, K.S., K.F. Sun. Appl. Surf. Sci. Vol. 252 (2006), p.8482.

Google Scholar

[8] G. Stuyven, P.D. Visschere, K. Neyts, A. Kitai, J. Appl. Phys. Vol. 93 (2003), p.4622.

Google Scholar

[9] B.J. Jin, S. Im, S.Y. Lee, Thin Solid Films Vol. 366 (2000), p.107.

Google Scholar

[10] H.Z. Wu, D.J. Qiu, Y.J. Cai, X.L. Xu, N.B. Chen, J. Cryst. Growth Vol. 245 (2002), p.50.

Google Scholar

[11] Shan F K, Kim B I, Liu G X, et al. Appl. Phys. Vol. 95, (2004), p.4772.

Google Scholar

[12] Ning Z Y, Cheng S H, Ge S B, Chao Y, Gang Z Q, Zhang Y X, Liu Z G. Thin Solid Films Vol. 307 (1997), p.50.

Google Scholar

[13] A. Ortı´z, C. Falcony, J. Herna´ndez, J. Hernandez, M. Garcia, J.C. Alonso, Thin Solid Films Vol. 293 (1997), p.103.

Google Scholar

[14] Z.N. Wang, M. F. Jiang. Z. Y. Ning, L. Zhu Acta Phys. Sin-ch Ed Vol. 57 (2008), p.6507.

Google Scholar