Growth of p-Type AlN Crystals by C and Si Codoping

Abstract:

Based on our earlier theoretical investigation, p-type C:Si codoped AlN crystals were grown on SiC substrates by a sublimation method in a improved growth reactor. Hall-effect measurement shows that the AlN crystals have a high hole density of 1.4×10¹⁴ cm^-3 and mobility of 52 cm²V^-1s^-1 in spite of the high resistivity (896 Ω•cm). In the AlN samples, Si dopants act as donors due to substituting Al atoms, and most of C dopants act as acceptors for replacing N atoms. It is also observed that the activation energy of C acceptors in C:Si codoped AlN is reduced by codoping Si donors, which agrees with the computational results.

• Periodical: Advanced Materials Research (Volumes 306-307)
• Pages: 246-250
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.306-307.246
• Online since: August 2011
• Authors: Hong Lei Wu, Rui Sheng Zheng, Wei Zheng, Zheng Yan
• Keywords: Activation Energy, AlN Crystal, Doping, P-Type Conductivity, Semiconductor

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