Design and Fabrication of Wafer Level Dual-Band Thin Film Bulk Acoustic Resonator Filters

Wei Tsai Chang; Ying Chung Chen; Chien Chuan Cheng; Kuo Sheng Kao; Re Ching Lin; Jia Ming Li

doi:10.4028/www.scientific.net/AMR.308-310.201

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 308-310Design and Fabrication of Wafer Level Dual-Band...

Design and Fabrication of Wafer Level Dual-Band Thin Film Bulk Acoustic Resonator Filters

Abstract:

This paper describes the design and fabrication of dual-mode film bulk acoustic resonator (TFBAR) devices to construct wafer level dual-band T-ladder type filters. The T-ladder type filters is selected in this study for its high quality and simple fabrication processes. The c-axis-tilted ZnO thin films to obtain dual-mode TFBAR devices have been investigated. The characteristics of dual-mode TFBAR devices appeared by off-axis deposition of ZnO thin films with the RF magnetron sputtering. The top and bottom electrodes consisted of titanium (Ti) and platinum (Pt) layers are deposited by dual-gun DC sputtering system. The pass-band width of filters is controlled by the mass loading on the dual-mode. The frequency response is measured using an HP8720 network analyzer and a CASCADE probe station.

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Periodical:

Advanced Materials Research (Volumes 308-310)

Pages:

201-208

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.308-310.201

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Online since:

August 2011

Authors:

Wei Tsai Chang, Ying Chung Chen, Chien Chuan Cheng, Kuo Sheng Kao, Re Ching Lin, Jia Ming Li

Keywords:

Dual-Mode TFBAR, Filter, Wafer Level, Zinc Oxide (ZnO)

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