Investigation of Effect of Chemical Etching and Temperature on Optical Properties of Porous Silicon Layer

Abstract:

Article Preview

The paper investigated the effect of chemical etching and temperature on the optical properties and microstructures of porous silicon layer fabricated by the pulse electrochemically etching by means of the reflectance spectroscopy and photoluminescence spectroscopy. The relationship between the optical thickness (nd) and refractive index n of porous silicon layer and the chemical etching time and temperature has been detailedly studied. With increasing the chemical etching times, the reflectance spectra exhibit the more intense interference oscillations, which mean the uniformity and interface smoothness of porous silicon layers become better, meanwhile, results in decreasing the optical thickness and refractive index, indicating a higher porosity. Moreover, the intensity of photoluminescence spectra increases, and the envelope curves of photoluminescence spectra exhibit a trend of red-shift, which implied the average diameter of silicon nanocrystallite became larger. The chemical etching rate of the optical thickness intensely increases with the chemical etching temperature.

Info:

Periodical:

Advanced Materials Research (Volumes 311-313)

Edited by:

Zhongning Guo

Pages:

1773-1778

DOI:

10.4028/www.scientific.net/AMR.311-313.1773

Citation:

Y. F. Long et al., "Investigation of Effect of Chemical Etching and Temperature on Optical Properties of Porous Silicon Layer", Advanced Materials Research, Vols. 311-313, pp. 1773-1778, 2011

Online since:

August 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.