Probing Active-Area Shift with Improved Kelvin Measurement for Trench DRAM

Abstract:

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In nano-like or nano-regime trench DRAM products, the product yield usually determines the marketing competition. Due to active area (AA) layer shift in lithography process, the cell leakage and the contact resistance at the source terminal of a cell transistor are increased. These factors will deteriorate the cell integrity in charging and access functions. To monitor this inferiority from lithography deviation, an improved Kelvin measurement and a novel pattern design were recommended. The yield improvement with this technology was really conspicuous.

Info:

Periodical:

Advanced Materials Research (Volumes 314-316)

Edited by:

Jian Gao

Pages:

2474-2477

DOI:

10.4028/www.scientific.net/AMR.314-316.2474

Citation:

M. C. Wang and H. C. Yang, "Probing Active-Area Shift with Improved Kelvin Measurement for Trench DRAM", Advanced Materials Research, Vols. 314-316, pp. 2474-2477, 2011

Online since:

August 2011

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Price:

$35.00

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