The Effect of Preparation Conditions to Crystall of Ti Film

Abstract:

Article Preview

Ti film on AISI 201 was prepared by plasma. The film was characterized and analyzed by using XRD. it was found that of Ti film has a different microstructure in different condition. With negative bias increased from 15V to 260V, the diffraction peaks of Ti films changed from planes (111) to planes (200). With power increased from 8W to 145W, the diffraction peaks of Ti films decrease at planes (002), the diffraction peaks of Ti films decrease at planes (102) and (103). The result suggests that negative bias and power contributed to form an different phase throughout the films. The vacuum, distance and time have no effect to crystal of Ti film.

Info:

Periodical:

Advanced Materials Research (Volumes 328-330)

Edited by:

Liangchi Zhang, Chunliang Zhang and Zichen Chen

Pages:

1339-1342

DOI:

10.4028/www.scientific.net/AMR.328-330.1339

Citation:

Q. Lai and S. H. Huang, "The Effect of Preparation Conditions to Crystall of Ti Film", Advanced Materials Research, Vols. 328-330, pp. 1339-1342, 2011

Online since:

September 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.