Optimization of Poly-Silicon Deposition Process for Semiconductor Bridge

Abstract:

Article Preview

Aiming at the severe effect of poly-silicon deposition process on the performance of semiconductor bridge, experiments were made on optimization of poly-silicon deposition to obtain optimal process conditions. Resistance of the poly-silicon semiconductor bridge was stabilized 1±0.07Ω, satisfying its application requirements.

Info:

Periodical:

Edited by:

Zhijiu Ai, Xiaodong Zhang, Yun-Hae Kim and Prasad Yarlagadda

Pages:

92-95

DOI:

10.4028/www.scientific.net/AMR.339.92

Citation:

Z. Y. Zhang et al., "Optimization of Poly-Silicon Deposition Process for Semiconductor Bridge", Advanced Materials Research, Vol. 339, pp. 92-95, 2011

Online since:

September 2011

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$35.00

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