Optimization of Poly-Silicon Deposition Process for Semiconductor Bridge
Aiming at the severe effect of poly-silicon deposition process on the performance of semiconductor bridge, experiments were made on optimization of poly-silicon deposition to obtain optimal process conditions. Resistance of the poly-silicon semiconductor bridge was stabilized 1±0.07Ω, satisfying its application requirements.
Zhijiu Ai, Xiaodong Zhang, Yun-Hae Kim and Prasad Yarlagadda
Z. Y. Zhang et al., "Optimization of Poly-Silicon Deposition Process for Semiconductor Bridge", Advanced Materials Research, Vol. 339, pp. 92-95, 2011