Optimization of Poly-Silicon Deposition Process for Semiconductor Bridge

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Abstract:

Aiming at the severe effect of poly-silicon deposition process on the performance of semiconductor bridge, experiments were made on optimization of poly-silicon deposition to obtain optimal process conditions. Resistance of the poly-silicon semiconductor bridge was stabilized 1±0.07Ω, satisfying its application requirements.

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92-95

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September 2011

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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[1] Zhu Fenchun; Qin Zhichun; Chen Xiwu; Zhou Bin; Xu Zhenxiang. Explosive Material, Vol. 33 (2004), pp.22-25.

Google Scholar

[2] Liu Xiguang; Xu Zhenxiang; Song Jingpu; Zbou Bin; Qin Zhichun; Wang Cheng; Du Qixue: Explosive Material, Vol. 33 (1995), pp.12-16.

Google Scholar

[3] Zhu Fengchun Xu Zhenxiang Chen Xiwu Zhou Bin Qin Zhichun Tian Guirong Hou Sujuan.Acta Armametarii, Vol. 24 (2003), pp.107-110.

Google Scholar

[4] Zhou Rong; Yue Suge; Qing Huiqian; Zhang Yucai; Hu Sifu. Chinese Journal of Semiconductors, Vol. 19 (1998), pp.857-860.

Google Scholar

[5] DU Zhijun; WANG Peilan,Initiators &Pyrotechnics, Vol. 4 (2005), pp.22-26.

Google Scholar