Enhanced Properties of Porous GaN Prepared by UV Assisted Electrochemical Etching

Abstract:

The structural and optical properties of porous GaN films on sapphire (0001) prepared by UV assisted electrochemical etching were reported in this study. SEM micrographs indicated that the shapes of the pores for both porous samples are nearly hexagonal. As compared to the as-grown GaN films, porous layers exhibit a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E₂(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation.

• Periodical: Advanced Materials Research (Volume 364)
• Pages: 90-94
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.364.90
• Online since: October 2011
• Authors: Mahmood Ainorkhilah, Mahmoud Ahmed Naser, Hassan Zainuriah, Fong Kwong Yam, Siti Khadijah Mohd Bakhori, Yushamdan Yusof, Lee Siang Chuah
• Keywords: Photoluminescence (PL), Porous GaN, Raman Spectroscopy, Scanning Electron Microscope (SEM)

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