Growth of Vertically Aligned ZnO Nanowires on Iron Oxide Layer

Abstract:

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A low cost and substrate-independent method has been established to synthesize vertically aligned ZnO nanowires (NWs) on iron oxide films coated silicon substrates via low pressure Chemical Vapor Deposition (CVD) method at 650oC. In this study, Si substrates were dipped into the iron (III) nitrate nonahydrate solution prior to the synthesis process. This oxidized iron film facilitated the growth of highly oriented (002) ZnO seed layer, which allowed subsequent vertically aligned ZnO NWs to be grown on top of it during the synthesis. This approach has provided a good alternative to grow vertically aligned ZnO NWs without the need of considering the epilayer relationship between the ZnO and the material to be used as substrate.

Info:

Periodical:

Advanced Materials Research (Volumes 378-379)

Edited by:

Brendan Gan, Yu Gan and Y. Yu

Pages:

740-743

DOI:

10.4028/www.scientific.net/AMR.378-379.740

Citation:

S. Y. Pung and K. L. Choy, "Growth of Vertically Aligned ZnO Nanowires on Iron Oxide Layer", Advanced Materials Research, Vols. 378-379, pp. 740-743, 2012

Online since:

October 2011

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Price:

$35.00

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