Growth of Vertically Aligned ZnO Nanowires on Iron Oxide Layer

Swee Yong Pung; Kwang Leong Choy

doi:10.4028/www.scientific.net/AMR.378-379.740

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 378-379Growth of Vertically Aligned ZnO Nanowires on Iron...

Growth of Vertically Aligned ZnO Nanowires on Iron Oxide Layer

Abstract:

A low cost and substrate-independent method has been established to synthesize vertically aligned ZnO nanowires (NWs) on iron oxide films coated silicon substrates via low pressure Chemical Vapor Deposition (CVD) method at 650oC. In this study, Si substrates were dipped into the iron (III) nitrate nonahydrate solution prior to the synthesis process. This oxidized iron film facilitated the growth of highly oriented (002) ZnO seed layer, which allowed subsequent vertically aligned ZnO NWs to be grown on top of it during the synthesis. This approach has provided a good alternative to grow vertically aligned ZnO NWs without the need of considering the epilayer relationship between the ZnO and the material to be used as substrate.

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Periodical:

Advanced Materials Research (Volumes 378-379)

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740-743

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.378-379.740

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Online since:

October 2011

Authors:

Swee Yong Pung, Kwang Leong Choy

Keywords:

Chemical Vapor Deposition (CVD), Iron Oxide Film, Vertically-Aligned, ZnO Nanowires

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