High-Quality Polysilicon Thin Film Recrystallization by Laser Annealing

Abstract:

Amorphous silicon (a:Si) recrystalized to poly-silicon (poly:Si) in different gas environments by excimer laser annealing (ELA) is studied. Variations of threshold laser power for the generation of surface ablation in pure N2 gas and the mixture of N2:98% and O2:2% environments are also investigated, respectively. From experiments, it is found the combination of N2:98% and O2:2% gas can enhance the threshold laser power from 320mJ/cm2 to 390mJ/cm2 for the suppressing of surface ablation phenomenon. In the condition of average grain over 0.25um, the process window (i.e. laser power for processing ability) is 30mJ/cm2 for pure N2 only, but is 50mJ/cm2 for the combination of N2:98% and O2:2%.

• Periodical: Advanced Materials Research (Volume 382)
• Pages: 26-29
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.382.26
• Online since: November 2011
• Authors: King Kung Wu, Wen Chung Chang
• Keywords: Grain Boundary, Laser Annealing, Optical Morphology (OM), Scanning Electron Microscope (SEM), Surface Ablation

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