High-Quality Polysilicon Thin Film Recrystallization by Laser Annealing

Abstract:

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Amorphous silicon (a:Si) recrystalized to poly-silicon (poly:Si) in different gas environments by excimer laser annealing (ELA) is studied. Variations of threshold laser power for the generation of surface ablation in pure N2 gas and the mixture of N2:98% and O2:2% environments are also investigated, respectively. From experiments, it is found the combination of N2:98% and O2:2% gas can enhance the threshold laser power from 320mJ/cm2 to 390mJ/cm2 for the suppressing of surface ablation phenomenon. In the condition of average grain over 0.25um, the process window (i.e. laser power for processing ability) is 30mJ/cm2 for pure N2 only, but is 50mJ/cm2 for the combination of N2:98% and O2:2%.

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Periodical:

Edited by:

Helen Zhang and David Jin

Pages:

26-29

DOI:

10.4028/www.scientific.net/AMR.382.26

Citation:

K. K. Wu and W. C. Chang, "High-Quality Polysilicon Thin Film Recrystallization by Laser Annealing", Advanced Materials Research, Vol. 382, pp. 26-29, 2012

Online since:

November 2011

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Price:

$35.00

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