Study on Electronic Excitation Temperature of Argon Plasma Using Low Pressure Micro-ICP Excitation Source

Abstract:

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Electronic excitation temperature is an important indicator of the spectrometer excitation source. This work experimented self-made micro-ICP excitation spectroscopy based on PCB technology, and detected 17 spectral lines in 690~860 nm of argon atom. 763.51 nm and 772.42 nm spectral lines whose wavelengths are close to were used to calculate electronic excitation temperature of argon excited by micro-ICP, and results show in 1600~3000 K. Experimental test data shows effects of argon gas pressure on electronic excitation temperature that in 20~210 Pa electronic excitation temperature increases with pressure on the whole. When argon pressure is greater than 220 Pa, plasma flame flickers and the electronic excitation temperature shows greater fluctuation; Experimental test shows effects of RF power on electronic excitation temperature that in 3~23 W electronic excitation temperature gradually increases with RF power. Causes of electronic excitation temperature with pressure, RF power variation are analyzed.

Info:

Periodical:

Advanced Materials Research (Volumes 383-390)

Edited by:

Wu Fan

Pages:

1844-1848

DOI:

10.4028/www.scientific.net/AMR.383-390.1844

Citation:

Y. Q. Wang et al., "Study on Electronic Excitation Temperature of Argon Plasma Using Low Pressure Micro-ICP Excitation Source", Advanced Materials Research, Vols. 383-390, pp. 1844-1848, 2012

Online since:

November 2011

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Price:

$35.00

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