Design and Analysis of a Piezoresistive Accelerometer with the Film-Island Structure

Article Preview

Abstract:

In this paper, we propose a piezoresistive accelerometer with the film- island structure, whose working range is up to 100,000g. Compared with the beam-island structure, the film-island structure has some advantages. With the film squeezed, the damping and the stiffness increase whereas the transverse sensitivity decreases. The fragmentation can be avoided in the overload situation. The damping characteristics, which are crucial for this accelerometer design, are theoretically analyzed in depth, and are verified by FEM simulation with ANSYS.

You might also be interested in these eBooks

Info:

Periodical:

Advanced Materials Research (Volumes 383-390)

Pages:

2237-2241

Citation:

Online since:

November 2011

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2012 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] PLAZAJ, ESTEVE J. TWIN -mass accelerometer optimization to reduce the package stress [J]. Sensors and Actuators, 2000 (80): 199 -207.

DOI: 10.1016/s0924-4247(99)00312-x

Google Scholar

[2] BAO M, SHEN S, A micromechanical structure eliminating lateral effect of silicon accelerometer[C]/Proc Transdcer91. San Francisco, USA, 1991, 1001-103.

Google Scholar

[3] Davies B, Barron C, Montague S, et al. High g mems integrated accelerometer [A]. Proc SPIE[C]. California, Use: SPIE Press, 1977. 3046 -3052.

Google Scholar

[4] Suminto T, A simple High Performance piezoresistive Accelerometer[C]/ Tech. Digest, 7th int. Conf. Solid-state, Sensors and Actuators(Transducers '91). San Francisco, CA, USA, 24-28 June, 1991, 104-107.

DOI: 10.1109/sensor.1991.148811

Google Scholar

[5] David Yazdi, Farrokh Ayazi, Khalil Najafi. Micro machined ineritial sensor[J]. Proceedings of the IEEE, 1998, 86(8): 1640-1659.

Google Scholar

[6] Ning Y, Loke Y, Mckinnon. Fabrication and characterization of high G-force silicon piezoresistive accelerometers[J]. Sens actuat A, 1995, 48(1): 55-61.

DOI: 10.1016/0924-4247(95)00981-7

Google Scholar

[7] Bao minhang. Analysis and Design Principles of Mems Devices[m], Elsevier, (2005).

Google Scholar

[8] Petersen Kurt E. Silicon as a Mechanical Material[J]. Proceedings of the IEEE, May 1982: 420-469.

Google Scholar

[8] Xin wang, judy. M, white.J. Validating fast Simulation of air damping in micromachined devices[A]. Micro Electro mechanical systems, 2002. The Fifteenth IEEE International Conference[C]. Nevada USA: IEEE, 2002. 210-213.

DOI: 10.1109/memsys.2002.984241

Google Scholar

[9] Katulka, G.L. Micro-elecromechanical systems and test result of SIC MEMS for high-g launch applications; Sensors, 2002. Proceedings of IEEE, Volume; 2, 12-14 June (2002).

DOI: 10.1109/icsens.2002.1037273

Google Scholar

[10] Shi Yunbo, Qi Xiaojin, Liu Jun. Design of sensitivity component of MEMS accelerometer sensor based on fuze[J]. Semiconductor Technology, 2006, 31(7): 90-96.

Google Scholar