[1]
PLAZAJ, ESTEVE J. TWIN -mass accelerometer optimization to reduce the package stress [J]. Sensors and Actuators, 2000 (80): 199 -207.
DOI: 10.1016/s0924-4247(99)00312-x
Google Scholar
[2]
BAO M, SHEN S, A micromechanical structure eliminating lateral effect of silicon accelerometer[C]/Proc Transdcer91. San Francisco, USA, 1991, 1001-103.
Google Scholar
[3]
Davies B, Barron C, Montague S, et al. High g mems integrated accelerometer [A]. Proc SPIE[C]. California, Use: SPIE Press, 1977. 3046 -3052.
Google Scholar
[4]
Suminto T, A simple High Performance piezoresistive Accelerometer[C]/ Tech. Digest, 7th int. Conf. Solid-state, Sensors and Actuators(Transducers '91). San Francisco, CA, USA, 24-28 June, 1991, 104-107.
DOI: 10.1109/sensor.1991.148811
Google Scholar
[5]
David Yazdi, Farrokh Ayazi, Khalil Najafi. Micro machined ineritial sensor[J]. Proceedings of the IEEE, 1998, 86(8): 1640-1659.
Google Scholar
[6]
Ning Y, Loke Y, Mckinnon. Fabrication and characterization of high G-force silicon piezoresistive accelerometers[J]. Sens actuat A, 1995, 48(1): 55-61.
DOI: 10.1016/0924-4247(95)00981-7
Google Scholar
[7]
Bao minhang. Analysis and Design Principles of Mems Devices[m], Elsevier, (2005).
Google Scholar
[8]
Petersen Kurt E. Silicon as a Mechanical Material[J]. Proceedings of the IEEE, May 1982: 420-469.
Google Scholar
[8]
Xin wang, judy. M, white.J. Validating fast Simulation of air damping in micromachined devices[A]. Micro Electro mechanical systems, 2002. The Fifteenth IEEE International Conference[C]. Nevada USA: IEEE, 2002. 210-213.
DOI: 10.1109/memsys.2002.984241
Google Scholar
[9]
Katulka, G.L. Micro-elecromechanical systems and test result of SIC MEMS for high-g launch applications; Sensors, 2002. Proceedings of IEEE, Volume; 2, 12-14 June (2002).
DOI: 10.1109/icsens.2002.1037273
Google Scholar
[10]
Shi Yunbo, Qi Xiaojin, Liu Jun. Design of sensitivity component of MEMS accelerometer sensor based on fuze[J]. Semiconductor Technology, 2006, 31(7): 90-96.
Google Scholar