This study focuses on inorganic gas barrier material in the advanced process techniques of solar cell devices for planarization properties and sublimate defect reduction. The inorganic gas barrier material have been optimized and studied for excellent surface planarization property. The newest approach by excellent collaborations from both process and material has the planarization property on an irregular substrate such as the patterned steps, via and trenches to increase the depth of focus and pattering resolution. A remarkable reduction in via topography with 0.6 μm as a depth and 0.13 μm as a diameter has been achieved excellent thickness bias less than 50 nm in 220 nm blanket field thickness. In addition, the sublimate amount of the film obtained from the developed inorganic gas barrier material was low as compared with that of the film obtained from the referenced organic non-gas barrier material.