High K / Metal Gate of Short-Channel SOI NMOSFET Research

Abstract:

Short-channel under TaCN/La₂O₃ gate structure SOI NMOSFET has been studied in this paper, contrast with the traditional gate structure gate leakage current and others electrical properties, using TaCN/La₂O₃ gate structure，significantly improved short-channel device performance etc. Additionally, the gate structure in the L=40nm, 30nm and 20nm of C-V characteristic and output characteristic are also studied; all the simulation results coincide with the theoretical analysis.

• Periodical: Advanced Materials Research (Volumes 383-390)
• Pages: 6902-6907
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.383-390.6902
• Online since: November 2011
• Authors: Gang Lu, Bo Zhao
• Keywords: La₂O₃, MOSFET, Short-Channel, TaCN

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DOI: 10.1016/j.sse.2010.01.007