High K / Metal Gate of Short-Channel SOI NMOSFET Research
Short-channel under TaCN/La2O3 gate structure SOI NMOSFET has been studied in this paper, contrast with the traditional gate structure gate leakage current and others electrical properties, using TaCN/La2O3 gate structure，significantly improved short-channel device performance etc. Additionally, the gate structure in the L=40nm, 30nm and 20nm of C-V characteristic and output characteristic are also studied; all the simulation results coincide with the theoretical analysis.
G. Lu and B. Zhao, "High K / Metal Gate of Short-Channel SOI NMOSFET Research", Advanced Materials Research, Vols. 383-390, pp. 6902-6907, 2012