High K / Metal Gate of Short-Channel SOI NMOSFET Research

Abstract:

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Short-channel under TaCN/La2O3 gate structure SOI NMOSFET has been studied in this paper, contrast with the traditional gate structure gate leakage current and others electrical properties, using TaCN/La2O3 gate structure,significantly improved short-channel device performance etc. Additionally, the gate structure in the L=40nm, 30nm and 20nm of C-V characteristic and output characteristic are also studied; all the simulation results coincide with the theoretical analysis.

Info:

Periodical:

Advanced Materials Research (Volumes 383-390)

Edited by:

Wu Fan

Pages:

6902-6907

DOI:

10.4028/www.scientific.net/AMR.383-390.6902

Citation:

G. Lu and B. Zhao, "High K / Metal Gate of Short-Channel SOI NMOSFET Research", Advanced Materials Research, Vols. 383-390, pp. 6902-6907, 2012

Online since:

November 2011

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Price:

$35.00

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