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Electronic Structure and Optical Properties of La or In Doped SnO2: First-Principles Calculations

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Abstract:

Based on the density functional method, the electronic structures and the optical properties for pure and La or In doped SnO2 are comparatively investigated in detail. The calculation results indicate that both the doping of La and the doping of In induce effective reduction of the band gap of SnO2, the impurity elements form new highly localized impurity energy level at the top of the valence band near the Fermi level. The interaction between electrons changed after doping which leads to the change of electrical properties .Meanwhile, red shifts are revealed in both the imaginary part of dielectric function and the absorption spectra corresponding to the change of band gaps

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Periodical:

Advanced Materials Research (Volumes 393-395)

Pages:

80-83

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.393-395.80

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Online since:

November 2011

Authors:

Chang Peng Chen, Mei Lan Qi

Keywords:

Electronic Structure, First-Principle Calculations, In Doped, La Doped, Optical Property

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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