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Defectivity Reduction in the Silicon Tough Polishing with Polyamine and Nonions Surfactant Additives
Abstract:
The effects of the polyamine chelating agent and nonions surfactant additive on the surface defectivity reduction in the final polishing of the mono silicon wafers were investigated using high-purity nano colloidal silica based organic alkaline slurry. Experimental results reveal that the chemical enhanced silicon final polishing slurry containing FA/O polyamine chelating agent and FA/O nonions surfactant changed the chemistry character of silicon surface, can realize the chemical uniform etch the surface areas with defects and defect-free area, deeply lower the surface microroughness of silicon polished wafer, achieving defect-free with perfect quality of flat mirror-surface.
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390-394
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Online since:
November 2011
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© 2012 Trans Tech Publications Ltd. All Rights Reserved
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