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A Study of a New Cleaning Agent for Post-CMP Pattern Wafer

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Abstract:

In this paper, it studies a new cleaning agent for post CMP pattern wafers. The polyamine chelating agent R(NH2)n complexing agent is used in pattern post-CMP cleaning, and the inhibitor BTA can effectively protect the wafer. The surfactant should be appropriate, and the concentration should be 1.5 ‰.

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Advances in Chemical Engineering: ICCMME 2011 View Preview

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Periodical:

Advanced Materials Research (Volumes 396-398)

Pages:

802-805

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.396-398.802

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Online since:

November 2011

Authors:

Bao Hong Gao, Ya Dong Zhu, Bai Mei Tan, Chen Wei Wang, Xin Huan Niu, Yan Yan Huang, Yu Ling Liu, Juan Wang

Keywords:

Chelating Agent, Inhibitor, Pattern, Post CMP Cleaning

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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