Effect of Sintering Atmosphere on the Dielectric Properties of BaTiO₃ via Boron-Addition Liquid-Phase Sintering

Abstract:

Boron-doped BaTi_1-xB_2xO_3+X materials were prepared via organic chelating chemistry using alcohols as solvents/ligands. When sintered under air at 900 °C, those materials were light-yellow colored, and yielded the dielectric properties comparable to those of pristine BaTiO₃ sintered at 1300 °C. However, they displayed blue/gray color after sinterd under Ar or a reductive atmosphere like 5%H2/Ar at T > 850 °C, and the dielectric properties dramatically changed compared with the samples sintered under air, suggesting the transformation of insulating BaTiO3 into an semiconductor. By contrast, pristine BaTiO₃ samples differed slightly in the dielectric properties when the sintering atmosphere was shifted from air to Ar or 5%H2/Ar. The possible mechanism of the “reduction” behavior in BaTi_1-xB_2xO_3+X materials (the role of boron in reduction of Ti⁴⁺ to Ti³⁺ in BaTiO₃ lattice) is under investigation.

• Periodical: Advanced Materials Research (Volumes 399-401)
• Pages: 842-846
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.399-401.842
• Online since: November 2011
• Authors: Zhuo Qun Zheng, Xiao Ping Zhou
• Keywords: Barium Titanate (BT), Boron, Dielectric Constant, Sintering Temperature, Titanium Reduction

References

[1] H.-I Hsiang, C.-S. His, C.-C. Huang, and S.-L. Fu: J. of Alloys Compd. Vol. 459 (2008), p.307

[2] D. Prakash, B.P. Sharma, T.R. Rama Mohan, and P. Gopalan: J. Solid State Chem. Vol. 155 (2000), p.86

[3] C.-H. Wang: Jpn. J. Appl. Phys. Vol. (41) 2002, p.5317

[4] T.R. Armstrong, K.A. Young, and R.C. Buchanan: J. Am. Ceram. Soc. Vol. 73 (1990), p.700

[5] H.-P. Jeon, S.-K. Lee, S.-W. Kim, and D.-K. Choi: Mater. Chem. Phys. Vol. 94 (2005), p.185

[6] S. M. Rhim, S. Hong, H. Bak, and O. K. Kim: J. Am. Ceram. Soc. Vol. 83 (2000), p.1145

[7] S. M. Rhim, H. Bak, S. Hong, and O. K. Kim: J. Am. Ceram. Soc. Vol. 83(2000), p.3009

[8] Y. Kuromitsu, S. F. Wang, S. Yashikawa, and R. E. Newnham: J. Am. Ceram. Soc. Vol.77(1994), p.493

[9] J.-H. Lee, Y.-W. Heo, J.-A. Lee, Y.-D. Ryoo, J.-J. Kim, and S.-H. Cho: Solid State Ionics Vol. 101-103(1997), p.787

[10] X.X. Wang, H.L.W. Chan, G.K.H. Pang, C.L. Choy: Mater. Sci. Eng., B Vol. 100 (2003), p.286

[11] J. Qi, W. Chen, H. Wang, Y. Wang, L. Li, and H.L.W. Chan: Sens. Actuators A Vol. 116 (2004), p.215

[12] J.S. Park, M.H. Yang, and Y.H. Han: Mater. Chem. Phys. Vol. 104 (2007), p.261

[13] S. Wang, X. Liu, J. Chen, L. Gao, and J. Zhang: Beijing Univ. Chem. Technol. Vol. 31 (2004), p.32

[14] S. Wada, H. Yasuno, T. Hoshina, S.-M. Nam, H. Kakemoto, and T. Tsurumi: Jpn. J. Appl. Phys. Vol. 42 (2003), p.6188

DOI: 10.1143/jjap.42.6188

[15] A. Shi, W. Yan, Y. Li, and K. Huang: J. Cent. South. Univ. Technol. Vol. 15 (2008), p.334