An ESD Protected Wideband CMOS Low Noise Amplifier Employing Active Feedback Technique

Kuan Bao; Xiang Ning Fan

doi:10.4028/www.scientific.net/AMR.403-408.2809

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 403-408An ESD Protected Wideband CMOS Low Noise Amplifier...

An ESD Protected Wideband CMOS Low Noise Amplifier Employing Active Feedback Technique

Abstract:

This paper presents a wideband low noise amplifier (LNA) for multi-standard radio applications. The low noise characteristic and input matching are simultaneously achieved by active-feedback technique. Bond-wire inductors and electrostatic devices (ESDs) are co-designed to improve the chip performance. Implemented in 0.18-μm CMOS process, the core size of the fully integrated LNA circuits is 535 μm×425 μm without any passive on-chip inductor. The simulated gain and the minimal noise figure of the CMOS LNA are 17.5 dB and 2.0 dB, respectively. The LNA achieves a -3dB bandwidth of 3.1 GHz. And the simulated IIP3 is -4.4 dBm at 2.5 GHz. Operating at 1.8V, the LNA draws a current of 7.7 mA.

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Periodical:

Advanced Materials Research (Volumes 403-408)

Pages:

2809-2813

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.403-408.2809

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Online since:

November 2011

Authors:

Kuan Bao, Xiang Ning Fan

Keywords:

Active Feedback, CMOS, ESD Protected, Low-Noise-Amplifier (LNA), Multistandard, Wideband

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References

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