A Theoretical Calculation of Misfit Dislocation and Strain Relaxation in Step-graded InxGa 1-x N/GaN Layers

Md. Arafat Hossain; Md. Rafiqul Islam

doi:10.4028/www.scientific.net/AMR.403-408.456

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 403-408A Theoretical Calculation of Misfit Dislocation...

A Theoretical Calculation of Misfit Dislocation and Strain Relaxation in Step-graded In_xGa _1-x N/GaN Layers

Abstract:

This paper presents a theoretical calculation of misfit dislocation and strain relaxation in compositionally step graded In_xGa _1-x N grown on GaN using the total dislocation energy at each interface. The results also compared with uniform layer of In _0.17 Ga _0.83 N and In _0.14 Ga _0.86 N grown differently on GaN. Due to having residual strain and a step increase in indium composition a lower misfit strain in upper layers and hence larger critical thickness at each interface has been reported. These effects significantly reduced the misfit dislocations from 2.6×10⁵ cm^-1 to 9.5×10⁴ cm^-1 in step graded In _0.14 Ga _0.86 N(500nm)/In _0.09 Ga _0.91 N(100nm)/In _0.05 Ga _0.95 N(100nm)/GaN layers instead of a uniform In _0.14 Ga _0.86 N(700nm)/GaN. A small residual strain of 0.0007 after 700 nm graded layer thickness has been reported with 87.04% strain relaxation.

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Periodical:

Advanced Materials Research (Volumes 403-408)

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456-460

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.403-408.456

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Online since:

November 2011

Authors:

Md. Arafat Hossain, Md. Rafiqul Islam

Keywords:

Critical Thickness, Misfit Dislocation, Step-Graded Layer, Threading Dislocation

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