Study of Depth-Dependent Tetragonal Distortion of GaN Epilayer with Tri-Layer AlGaN Interlayer Growth on Si(111)

Bin Feng Ding; Yong Quan Chai

doi:10.4028/www.scientific.net/AMR.413.11

Paper Titles

Preface

Study on the Mechanics State of Concrete under Penetration and the Deceleration of Projectile
p.1

Innovation Status and Trends of Korea Nano-Sensor Technology from a Perspective of Patent Analysis
p.7

Study of Depth-Dependent Tetragonal Distortion of GaN Epilayer with Tri-Layer AlGaN Interlayer Growth on Si(111)
p.11

Magnetic Confinement of Plasmas Generated by Coaxial Twinned Electron Cyclotron Resonance (ECR) Discharge
p.18

Research on Carbon Dioxide Corrosion of Cement Stones of Oil Well Casings under High Temperature and High Pressure
p.24

Application of High Performance Concrete with Compound Admixtures of Fly Ash and Perlite Powder in Pavement of Highway
p.29

Study on the Experiment of Adsorption Cadmium (II) with Insoluble Starch Xanthate
p.34

Study on Treatment of Cr (VI)-Containing Wastewater with Nitric Acid Modified Activated Carbon
p.38

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 413Study of Depth-Dependent Tetragonal Distortion of...

Study of Depth-Dependent Tetragonal Distortion of GaN Epilayer with Tri-Layer AlGaN Interlayer Growth on Si(111)

Abstract:

A GaN epilayer with tri-layer AlGaN interlayer grown on Si (111) by metal-organic chemical vapor deposition (MOCVD) method was discussed by synchrotron radiation x-ray diffraction (SRXRD) and Rutherford backscattering (RBS)/C. The crystal quality of the epilayer is very good with a χ_min=2.1%. According to the results of the θ-2θ scan of GaN(0002) and GaN(1122), the epilayer elastic strains in perpendicular and parallel directions were calculated respectively to be-0.019% and 0.063%. By the angular scan using RBS/C around a symmetric [0001] axis and an asymmetric [1213] axis in the (1010) plane of the GaN layer, the tetragonal distortion (e_T ) were determined to be 0.09%. This result coincides with that from SRXRD perfectly. The strain decreases gradually towards the near-surface layer, which will avoid the film cracks efficiently and improve the crystal quality of the GaN epilayer remarkably.

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Advanced Materials Research (Volume 413)

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11-17

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https://doi.org/10.4028/www.scientific.net/AMR.413.11

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December 2011

Authors:

Bin Feng Ding, Yong Quan Chai

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Elastic Strain, MOCVD, RBS/C, SRXRD

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