The Influence of Ba-Ti Ratio on the Electrical Properties and Microstructures of the Ba_M-0.007Sm_0.007TiO₃ Based Ceramics Fired in Reducing Atmosphere

Abstract:

Electrical properties, positive temperature coefficient of resistivity (PTCR), and microstructures of (Ba_m-0.007Sm_0.007)TiO₃ (BST) with different Ba-site/Ti-site (A/B) ratio sintered in a reducing atmosphere and reoxidized in air are investigated. The results reveal that the room temperature resistivity of the semiconducting BST ceramics first decreases and then increases with increasing of A/B ratio (m), particularly when m is equal to 1.006, the semiconducting BST ceramics which have been sintered in a reducing atmosphere and reoxidized at 800°C exhibit significant PTCR effect with a resistance jumping ratio of 3 orders magnitude, and achieve a lower room temperature resisitivity of 80.8 Ω∙cm, in addition, the grain size distribution of the Ti-excess specimens is much better than that of the Ba-excess ones.

• Periodical: Advanced Materials Research (Volumes 415-417)
• Pages: 1032-1037
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.415-417.1032
• Online since: December 2011
• Authors: Xu Xin Cheng, Dong Xiang Zhou, Qiu Yun Fu, Shu Ping Gong
• Keywords: BaTiO₃ Ceramics, PTCR Effect, Re-Oxidation, Sm₂O₃-Dopant

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