Theoretical Energy Distributions of Electrons from a Large Exponential-Doping GaAs Photocathode

Zhi Peng Cai; Wen Zheng Yang; Wei Dong Tang; Xun Hou

doi:10.4028/www.scientific.net/AMR.415-417.1302

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 415-417Theoretical Energy Distributions of Electrons from...

Theoretical Energy Distributions of Electrons from a Large Exponential-Doping GaAs Photocathode

Abstract:

Theoretical calculation indicates that the large exponential-doping GaAs photocathodes have a much narrower electron energy distribution than traditional GaAs NEA cathodes, and the excellent performance attributes to the special structure characters of the band-bending region and lower negative electron affinity of the new-type GaAs photocathodes. The effects of surface doping concentration and work function on the energy distribution are discussed in details, and the FWHM of the energy distribution is less than 100meV. The simulation results indicate that the large exponential-doping mode further improves the features of the electron energy spreads for GaAs photocathodes, which may meet the further demand of next generation of electron guns.

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Advanced Materials Research (Volumes 415-417)

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1302-1305

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https://doi.org/10.4028/www.scientific.net/AMR.415-417.1302

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December 2011

Authors:

Zhi Peng Cai, Wen Zheng Yang, Wei Dong Tang, Xun Hou

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Energy Distribution, GaAs Photocathodes, Large Exponential-Doping

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