Irradiation Damage of Electron-Beam on High-Power AlInGaP Red LED

Rui Bin Zhang; Yi Ping Huang; Hai Lang Liu; Zhi Guo Peng

doi:10.4028/www.scientific.net/AMR.415-417.1297

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 415-417Irradiation Damage of Electron-Beam on High-Power...

Irradiation Damage of Electron-Beam on High-Power AlInGaP Red LED

Abstract:

In this paper, experimental results and Monte Carlo simulation methods used to study irradiation damage of Electron-beam on high-power AlInGaP red LED. The electron beam range and distribution of energy loss in the LED chip are analyzed by CASINO program in detail, the high-power AlInGaP red LED is irradiated by different energy and dose of electron beam irradiation produced by the low energy electron beam irradiation equipment. We contrast the optical parameter of the irradiated LED with the unirradiated LED. The experimental result is analyzed and discussed by the mechanism of electron beam irradiation. The results show that: the luminous flux and power change of the irradiated and unirradiated LED are showed by dose-response. In process of irradiation, the elastic collision and ionization are occurred between the incident particles and atoms within the material, which cause defect in the internal structure of the AlInGaP material and form the color centers.

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Periodical:

Advanced Materials Research (Volumes 415-417)

Pages:

1297-1301

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.415-417.1297

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Online since:

December 2011

Authors:

Rui Bin Zhang, Yi Ping Huang, Hai Lang Liu, Zhi Guo Peng

Keywords:

AlInGaP, Irradiation Damage, Luminous Flux, Luminous Power, Monte-Carlo

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