Second-Harmonic Generation of the Chalcogenide Amorphous Film by Electron Beam Irradiation

Jun Hu; Shao Xuan Gu

doi:10.4028/www.scientific.net/AMR.415-417.1376

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 415-417Second-Harmonic Generation of the Chalcogenide...

Second-Harmonic Generation of the Chalcogenide Amorphous Film by Electron Beam Irradiation

Abstract:

PLD(pulsed laser deposition) method was used to prepare amorphous GeS₂-Ga₂S₃-CdS chalcogenide film. Obvious SHG(second harmonic generation) was observed in electron beam irradiated film by Maker fringe method. According to Raman spectra, we discussed the mechanism of SHG and ascribed the origination of SHG to the local electric field generation under electron beam and uneven charge distribution. With the increase of accelerating voltage and the extension of irradiation time, the SHG intensity increased and reached the maximum, which is due to the enhancement of breakage of glassy isotropy with gradually increased incident electron energy and the finite population of electric dipoles leading to the saturation of SH intensity.

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Advanced Materials Research (Volumes 415-417)

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1376-1381

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.415-417.1376

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Online since:

December 2011

Authors:

Jun Hu, Shao Xuan Gu

Keywords:

Amorphous GeS₂-Ga₂S₃-CdS Chalcogenide Film, Electron Beam Irradiation, Maker Fringes, SHG

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