The Parameter Influence of Electron Beam Irradiation on GaN Based Blue LED

Zhi Guo Peng; Hai Lang Liu; Rui Bin Zhang

doi:10.4028/www.scientific.net/AMR.415-417.2093

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 415-417The Parameter Influence of Electron Beam...

The Parameter Influence of Electron Beam Irradiation on GaN Based Blue LED

Abstract:

Making use of the low energy electron beam produced by the accelerator of Dynamitron which has 1-3 Mev energy and 90KW maximum power, GaN based blue LED is proceed by the electron beam irradiation. The color and luminosity parameter of the irradiated LED are contrasted with the unirradiated LED. The experimental result is analyzed and discussed. The results show that the dominant wavelength is shifted, the color purity is improved, the flux and the optical efficiency are dreased by the electron beam irradiation. We also find that the displacement of atoms in LED quantum well, the non-complex compound and minority carrier lifetime is reduced by the electron beam irradiation.

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Periodical:

Advanced Materials Research (Volumes 415-417)

Pages:

2093-2096

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.415-417.2093

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Online since:

December 2011

Authors:

Zhi Guo Peng, Hai Lang Liu, Rui Bin Zhang

Keywords:

Electron Accelerator, Electron Beam Irradiation, Gallium Nitride (GaN), LED

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References

[1] Xie Wanling. Effects of high-temperature electron irradiation in n-GaN schottky barrier diode[D].Chengdu:Sichuan University, 2006.8-14

Google Scholar

[2] Fang Zhilie. Semiconductor lighting technology [M]. Beijing: Electronic Industry Press .2009:70-73.

Google Scholar

[3] Zhang Shulin. Vacuum technology, the physical basis of [M]. Shenyang: Northeastern University Press .1988:25-40.)

Google Scholar

[4] Luo Yi,Zhang Xianpeng, Han yaniun et al..Key technologies for solid state lighting[J].Laser & Optoelectronics Progress.,2007,44(3):17-28

Google Scholar

[5] Van Lint VA,Flanahan TM, Leadon RE,Naber JA,Rogers VC(1980) Mechanisms of radiation effects in electronic materials.Wiley Interscience, New York.

Google Scholar

[6] Adams L,Holmes-Siedle A(1993)Handbook of radiation effects.Oxford Scientific Publishers, Oxford.

Google Scholar

[7] Witczak SC,Winokur PS,Lacoe RC,Mayer DC(2000)Charge separation technique for metal-oxide-semiconductor capacitors in the presence of hydrogen deactivated dopants. JAppl Phys 87:8206-8208.

DOI: 10.1063/1.373522

Google Scholar