Electrical-Pumped Active Plasmonic with InP-Based Quantum Wells

Te Li; Er Juan Hao

doi:10.4028/www.scientific.net/AMR.415-417.537

Paper Titles

Universal Serial Protocol Grammar Analysis Model
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The Geometrical Feature Recognition Method of Part Drawing
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Study on the Magnetic Induction Effect of Rare-Earth La Modified Amorphous Ribbons
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Study on the Filling Particle for Foam Ferrous Metalmaking Needed
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Electrical-Pumped Active Plasmonic with InP-Based Quantum Wells
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Study on Preparation and Mechanical Intensity of Nano-TiB₂/ Tussah Silk Fibroin Composite Membrane
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Nano Materials Used in Industrial Design
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Effect of Casting Velocity on Microstructures of Almg0.9Si0.7 Alloy by Low-Superheat DC Casting
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Structure of Chromium Atomic Chains
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Electrical-Pumped Active Plasmonic with InP-Based Quantum Wells

Abstract:

The InP-based wafers with InGaAsP multiple Quantum Wells (QWs) were designed for the loss compensation of surface plasmon polaritons (SPPs). Electrical-pumped device was fabricated by conventional III-V processes and e-Beam lithography (EBL) technology. When forward voltage is added on the device, it is observed that the gain of the quantum wells at 1.55μm assist the propagation of SPPs.