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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 415-417Rectifying Properties of La1-XSrXMnO3/Si (x=0.2,...

Rectifying Properties of La_1-XSr_XMnO₃/Si (x=0.2, 0.04) PN Heterostructures

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Abstract:

La_1-xSr_xMnO₃ (x=0.2, 0.04)/Si PN heterostructures were prepared by RF magnetron sputtering method, which have evident rectifying properties. Furthermore, the excellent rectifying properties are presented in a relatively wide temperature range for La_0.8Sr_0.2MnO₃/Si heterostructures. The diffusion voltage decreases with increasing the temperatures, which is attributed to the modulation of the interfacial electronic structure of the heterostructures.

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Advanced Materials, ICAMMP 2011

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Periodical:

Advanced Materials Research (Volumes 415-417)

Pages:

625-628

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.415-417.625

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Online since:

December 2011

Authors:

Tong Li, Yu Zhang, Xiao Chang Ni

Keywords:

Heterostructures, Manganite, Rectifying Properties

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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