Gas Phase Phosphorus Heavily-Doped FZ Silicon Thermal Field Design and Growth Method

Xue Nan Zhang; Jian Hong Li; Yu Tian Wang; Chang Xu Zhang; Chun Geng Yang; Hao Ping Shen; Ji Hui Wang

doi:10.4028/www.scientific.net/AMR.430-432.929

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 430-432Gas Phase Phosphorus Heavily-Doped FZ Silicon...

Gas Phase Phosphorus Heavily-Doped FZ Silicon Thermal Field Design and Growth Method

Abstract:

This paper introduces the fabrication method of a kind of gas phase phosphorus heavily-doped float zone (FZ) silicon, including thermal field design (electromagnetic copper coil with double water cooling system). This method solves the problems during the pulling process of heavily-doped FZ silicon crystal of phosphorus doped. The gas phase phosphorus heavily-doped FZ silicon crystal using this methods with low oxygen content (less than 0.2ppma),low radial resistivity variation (less than 10%), low resistivity (the minimum of 0.002 ohm.cm), and is good to meet the transient voltage suppressor (TVS) for silicon substrate material requirements.

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Periodical:

Advanced Materials Research (Volumes 430-432)

Pages:

929-932

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.430-432.929

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Online since:

January 2012

Authors:

Xue Nan Zhang, Jian Hong Li, Yu Tian Wang, Chang Xu Zhang, Chun Geng Yang, Hao Ping Shen, Ji Hui Wang

Keywords:

Float Zone, Gas Phase, Heavily-Doping, Phosphorus, Thermal Field

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