Design and Fabricate InGaAlAs Quantum Well Device for Future Optoelectronic Integration

Abstract:

InGaAlAs multiple Quantum Wells (QWs) on InP substrate were designed for the loss compensation of surface plasmon polaritons (SPPs). Quantum well material, number of the quantum well, composition and other details of the wafer were discussed. The wafer was grown on n+ InP substrate by metalorganic chemical vapor deposition. Electrical-pumped device was fabricated by conventional III-V processes and e-Beam lithography (EBL) technology. When forward voltage is added on the device, it is observed that the propagation length of long-range SPPs decreases with increasing gain coefficient and the gain of the quantum wells at 1.55μm assist the propagation of SPPs.

• Periodical: Advanced Materials Research (Volume 442)
• Pages: 188-192
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.442.188
• Online since: January 2012
• Authors: Te Li, Er Juan Hao, Yong Wang, Peng Lu, Yi Qu, Guo Jun Liu
• Keywords: Active Plasmonic, Electrical-Pumped, InGaAlAs, Quantum Well

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