Microstructure Modeling for Prediction of Thermal Conductivity of Plain Weave C/SiC Composites Considering Manufacturing Flaws

Sheng Shan Li; Xiao Yan Tong; Lei Jiang Yao; Bin Li

doi:10.4028/www.scientific.net/AMR.460.342

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 460Microstructure Modeling for Prediction of Thermal...

Microstructure Modeling for Prediction of Thermal Conductivity of Plain Weave C/SiC Composites Considering Manufacturing Flaws

Abstract:

Utilized photomicrographs taken by scanning electron microscope (SEM), an accurate representative volume element (RVE) model for plain weave C/SiC composites is established. Based on the steady-analysis method, the in-plane and thickness direction thermal conductivity of the C/SiC composites are calculated as 25.6Wm-1K-1 and 12.1Wm-1K-1, respectively. The manufacturing flaws have different effect on thermal conductivity. Compared with RVE without flaws, the result shows that matrix cracks make thermal conductivity decrease by 7.2% in the in-plane direction and have little effect in the thickness direction; matrix porosities have a significant effect on thermal conductivity, which make the thermal conductivity decrease by 16.7% in the in-plane direction and decrease by 25.4% in the thickness direction. The variation law of thermal conductivity along with porosity volume is also observed: as matrix porosity volume fraction is increasing, the thermal conductivity of material shows significant decrease.

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Periodical:

Advanced Materials Research (Volume 460)

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342-346

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.460.342

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Online since:

February 2012

Authors:

Sheng Shan Li, Xiao Yan Tong, Lei Jiang Yao, Bin Li

Keywords:

C/SiC, Microstructure Modeling, RVE, SEM, Thermal Conductivity (TC)

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