Effects of Bi Doping on the In15Sb85 Phase Change Recording Thin Film

Sin Liang Ou; Po Cheng Kuo; Shu Chi Sheu; Chih Hsiang Hsiao; Don Yau Chiang; Wei Tai Tang

doi:10.4028/www.scientific.net/AMR.47-50.813

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 47-50Effects of Bi Doping on the In15Sb85 Phase Change...

Effects of Bi Doping on the In₁₅Sb₈₅ Phase Change Recording Thin Film

Abstract:

The (In15Sb85)100-xBix films (x = 0~18.3) were deposited on nature oxidized Si wafer and glass substrate at room temperature by magnetron co-sputtering of Sb target and InBi composite target. The optical and thermal properties of the films were examined by reflectivity thermal analyzer. Microstructures of the films were analyzed by X-ray diffraction and transmission electron microscope. The crystallization activation energy of the (In15Sb85)100-xBix film (x = 0~18.3) was decreased with increasing Bi content, this indicated that the crystallization speed was improved by doping Bi. The structure of as-deposited (In15Sb85)100-xBix films was amorphous and it would transform to Sb, InSb, Bi, and BiIn2 coexisting phases after annealing at 250 °C for 30 min.