Effects of Bi Doping on the In15Sb85 Phase Change Recording Thin Film
The (In15Sb85)100-xBix films (x = 0~18.3) were deposited on nature oxidized Si wafer and glass substrate at room temperature by magnetron co-sputtering of Sb target and InBi composite target. The optical and thermal properties of the films were examined by reflectivity thermal analyzer. Microstructures of the films were analyzed by X-ray diffraction and transmission electron microscope. The crystallization activation energy of the (In15Sb85)100-xBix film (x = 0~18.3) was decreased with increasing Bi content, this indicated that the crystallization speed was improved by doping Bi. The structure of as-deposited (In15Sb85)100-xBix films was amorphous and it would transform to Sb, InSb, Bi, and BiIn2 coexisting phases after annealing at 250 °C for 30 min.
Alan K.T. Lau, J. Lu, Vijay K. Varadan, F.K. Chang, J.P. Tu and P.M. Lam
S. L. Ou et al., "Effects of Bi Doping on the In15Sb85 Phase Change Recording Thin Film", Advanced Materials Research, Vols. 47-50, pp. 813-816, 2008