Effects of Bi Doping on the In15Sb85 Phase Change Recording Thin Film

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The (In15Sb85)100-xBix films (x = 0~18.3) were deposited on nature oxidized Si wafer and glass substrate at room temperature by magnetron co-sputtering of Sb target and InBi composite target. The optical and thermal properties of the films were examined by reflectivity thermal analyzer. Microstructures of the films were analyzed by X-ray diffraction and transmission electron microscope. The crystallization activation energy of the (In15Sb85)100-xBix film (x = 0~18.3) was decreased with increasing Bi content, this indicated that the crystallization speed was improved by doping Bi. The structure of as-deposited (In15Sb85)100-xBix films was amorphous and it would transform to Sb, InSb, Bi, and BiIn2 coexisting phases after annealing at 250 °C for 30 min.

Info:

Periodical:

Advanced Materials Research (Volumes 47-50)

Edited by:

Alan K.T. Lau, J. Lu, Vijay K. Varadan, F.K. Chang, J.P. Tu and P.M. Lam

Pages:

813-816

DOI:

10.4028/www.scientific.net/AMR.47-50.813

Citation:

S. L. Ou et al., "Effects of Bi Doping on the In15Sb85 Phase Change Recording Thin Film", Advanced Materials Research, Vols. 47-50, pp. 813-816, 2008

Online since:

June 2008

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$35.00

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