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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 479-481Preparation of MgB2 Superconducting Thin Films at...

Preparation of MgB2 Superconducting Thin Films at Low Temperature

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Abstract:

MgB2 superconducting thin films have been fabricated on Silicon (111) substrate in a two-step ex situ approach. The precursor boron film was deposited by chemical vapor deposition by using diborane as the boron source at 460°C．The Magnesium film with a thickness of about 380nm was deposited on top of the boron film by magnetron sputtering. The samples were then post-annealed in situ in argon atmosphere at 500°C for time range from 2.5h to 5.0h. The sample for optimized annealing time exhibits abrupt superconducting transition, with an onset temperature around 35K and a zero resistance temperature greater than 34K. The microstructures and morphological properties of the films were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

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Periodical:

Advanced Materials Research (Volumes 479-481)

Pages:

1781-1785

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.479-481.1781

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Online since:

February 2012

Authors:

Zhang Yu Zhou, Fa Shun Yang, Jian Yang, Song Wang, Xing Hua Fu

Keywords:

Low-Temperature, MgB₂ Superconducting Thin Film, SEM, X-Ray Diffraction (XRD)

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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