Influence of Annealing Treatment on N-Doped TiO2 Films Deposited by Pulsed Negative Bias Arc Ion Plating

Shu Juan Zhang; Ming Sheng Li; Zhi Qin Chen; Yong Zhong Fan

doi:10.4028/www.scientific.net/AMR.482-484.1105

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 482-484Influence of Annealing Treatment on N-Doped TiO2...

Influence of Annealing Treatment on N-Doped TiO₂ Films Deposited by Pulsed Negative Bias Arc Ion Plating

Abstract:

The N-doped TiO₂ thin films were deposited on medical glass slide by pulsed negative bias arc ion plating. The influence of pulsed negative bias, annealing temperature and time on films properties was investigated. Film structure, surface morphologies and optical properties were measured with XRD, SEM and UV-VIS transmittance spectroscope. Photo-catalytic performance of the films was evaluated by degrading methyl orange. The results show that the absorption edges of the as-deposited films increase with the rising of the pulse negative bias, and the maximum of 550 nm is achieved under -600V bias. The films absorption edges increase in different degree after annealing at 400°Cand 500°Cfor 2h, and the best extending can increase 22nm after annealing. The diffraction peak intensity and surface grain size increase with increasing the annealing temperature and time. The grain size of films after annealing at 400°C for 4h is largest of all the films. The pulsed negative bias and annealing treatment not only indecrease TiO₂ thin films the UV catalytic performance, but also extend the catalytic properties to the sunlight.

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Periodical:

Advanced Materials Research (Volumes 482-484)

Pages:

1105-1110

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.482-484.1105

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Online since:

February 2012

Authors:

Shu Juan Zhang, Ming Sheng Li, Zhi Qin Chen, Yong Zhong Fan

Keywords:

Annealing Treatment, Arc Ion Plating, N-Doped TiO₂, Pulsed Negative Bias

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